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    Home  -  Product  -  PIR Sensor Series  -  Pyroelectric infrared sensor

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    * * *
    Pyroelectric infrared sensor

    <

    >

    PIR200B Analog sensor

    1. Part NO.: PIR200B

    2. Usage: Universal big window probe, can be used for automatic lighting automatic door toy into alarming, etc

    3. Sensitive type: double type series

    4. Size: TO-5 packaging, pls see chart 1.

    5. Performance index

    Online consultation

    Specification

    1. Part NO.: PIR200B

    2. Usage: Universal big window probe, can be used for automatic lighting automatic door toy into alarming, etc

    3. Sensitive type: double type series

    4. Size: TO-5 packaging, pls see chart 1.

    5. Performance index

    5.1

    Project

    Testing condition

    specification

    signal output

    ambient temperature 25ºC


    ≥ 4 Vp-p

    blackbody temperature 420K( 147˚C )


    modulation frequency 1HZ


    magnification

    72.5  dB ( operational

    amplifier

    5000X)



    Vd= 5V,Rs=47KΩ


    Noise

    ambient temperature 25ºC


    <150mVp-p

    magnification

    72.5 dB ( operational

    amplifier

    Max.

    5000X)





    (Typ. 90mVp-p)

    Vd= 5V,Rs=47KΩ




    degree of

    balance [*]

    blackbody temperature 420K( 147˚C )


    <15%

    magnification

    72.5 dB ( operational

    amplifier

    5000X)





    Vd= 5V,Rs=47KΩ


    Mains voltage




    3~15V

    Source 

    Voltage

    Vd= 5V,Rs=47KΩ


    0.4~1.1V

    response time

    Plus  electric  signal  stability  after  the  time required for output

    <12S

    [*]  degree of balance = VAB/|VA+VB| ×100% 

    VAB= double sensitivity (mVp-p)

     VA = A 'sensitivity ( mVp-p )

     VB = B 'sensitivity ( mVp-p )

     Testing way, pls see chart 2、3。

         

    5.2 optical property

    Project

    Specification

    View Angle

    X:140。

    Y:130 ;pls see chart 4

    Accept wavelength

    5.5~14μm;pls see chart 5

    cut-off wavelength

    5.2±0.5μm;pls see chart 5

    Average transmittance

    >72%,7~14μm

    Filter materials

    silicon

    Thickness of filter

    0.50mm


    5.3 Environmental performance

    Project

    Specification

    Operating temperature

    -30—70ºC

    Storage Temperature

    -35—80ºC


    6.reliability evaluation

    test project

    Testing condition

    tester

    Testing standard

    high-temperature

    working

    70℃ 72 hours

    temperature-regulated

    oven

    After the test, put the sensor in the natural environment 3hours, then test electrical

    performance measurement.

    1. appearance no change

    2. keep electric performance parameters within 20%  

    sweat resistance

    60℃,95%RH,72

    hours

    temperature and

    humidity regulator

    LTST

    -40℃ 72 hours

    temperature-regulated

    oven

    HTST

    70℃ 72 hours

    temperature-regulated

    oven

    Thermal shock

    -40℃

    1hour→Room

    Temperature

    1hour→70℃,1hour

    10  recycle

    temperature-regulated

    oven

    natural aging

    Outside 30days

    Test prototype

    soldering

    resistance

    260±5℃,10s

    Dip depth 3.0mm

    soldering furnace

    Seal

    133.3

    pascal,1minute

    vacuum pump

    No bubble

    PIR200B(图1)

    Chart 1.: Specification of the sensor


    PIR200B(图2)

    Chart 2: Testing Schematic plot

     

    PIR200B(图3)

    Chart 3. PIR sensor testing Schematic plot


    5. Performance index

    5.1

    Project

    Testing condition

    specification

    signal output

    ambient temperature 25ºC


    ≥ 4 Vp-p

    blackbody temperature 420K( 147˚C )


    modulation frequency 1HZ


    magnification

    72.5  dB ( operational

    amplifier

    5000X)



    Vd= 5V,Rs=47KΩ


    Noise

    ambient temperature 25ºC


    <150mVp-p

    magnification

    72.5 dB ( operational

    amplifier

    Max.

    5000X)





    (Typ. 90mVp-p)

    Vd= 5V,Rs=47KΩ




    degree of

    balance [*]

    blackbody temperature 420K( 147˚C )


    <15%

    magnification

    72.5 dB ( operational

    amplifier

    5000X)





    Vd= 5V,Rs=47KΩ


    Mains voltage




    3~15V

    Source 

    Voltage

    Vd= 5V,Rs=47KΩ


    0.4~1.1V

    response time

    Plus  electric  signal  stability  after  the  time required for output

    <12S

    [*]  degree of balance = VAB/|VA+VB| ×100% 

    VAB= double sensitivity (mVp-p)

     VA = A 'sensitivity ( mVp-p )

     VB = B 'sensitivity ( mVp-p )

     Testing way, pls see chart 2、3。

         

    5.2 optical property

    Project

    Specification

    View Angle

    X:140。

    Y:130 ;pls see chart 4

    Accept wavelength

    5.5~14μm;pls see chart 5

    cut-off wavelength

    5.2±0.5μm;pls see chart 5

    Average transmittance

    >72%,7~14μm

    Filter materials

    silicon

    Thickness of filter

    0.50mm


    5.3 Environmental performance

    Project

    Specification

    Operating temperature

    -30—70ºC

    Storage Temperature

    -35—80ºC


    6.reliability evaluation

    test project

    Testing condition

    tester

    Testing standard

    high-temperature

    working

    70℃ 72 hours

    temperature-regulated

    oven

    After the test, put the sensor in the natural environment 3hours, then test electrical

    performance measurement.

    1. appearance no change

    2. keep electric performance parameters within 20%  

    sweat resistance

    60℃,95%RH,72

    hours

    temperature and

    humidity regulator

    LTST

    -40℃ 72 hours

    temperature-regulated

    oven

    HTST

    70℃ 72 hours

    temperature-regulated

    oven

    Thermal shock

    -40℃

    1hour→Room

    Temperature

    1hour→70℃,1hour

    10  recycle

    temperature-regulated

    oven

    natural aging

    Outside 30days

    Test prototype

    soldering

    resistance

    260±5℃,10s

    Dip depth 3.0mm

    soldering furnace

    Seal

    133.3

    pascal,1minute

    vacuum pump

    No bubble


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