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    Home  -  Product  -  PIR Sensor Series  -  Pyroelectric infrared sensor

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    Pyroelectric infrared sensor

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    >

    P914 Digital sensor

    The P914 is a pyroelectric infrared sensor that integrates a digital intelligent control circuit and a human body detection sensitive element in an electromagnetic shielding cover. The human body sensing sensor couples the sensed body motion signal to the digital smart integrated circuit chip through a very high impedance differential input circuit. The digital smart integrated circuit converts the signal into a 15-bit ADC digital signal when the PIR signal exceeds the selected digital valve. The value will have a timed REL level output.

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     1. Overview

    The P914 is a pyroelectric infrared sensor that integrates a digital intelligent control circuit and a human body detection sensitive element in an electromagnetic shielding cover. The human body sensing sensor couples the sensed body motion signal to the digital smart integrated circuit chip through a very high impedance differential input circuit. The digital smart integrated circuit converts the signal into a 15-bit ADC digital signal when the PIR signal exceeds the selected digital valve. The value will have a timed REL level output.

    2..the  characteristics

    l Digital signal processing, low voltage, low power consumption, and work instantly after startup.

    l Two-way differential very high impedance sensor input

    l Second-order Butterworth bandpass filter with built-in infrared sensor to shield input interference at other frequencies

    l Sensitivity, timing time, illumination sensor Schmitt REL output.

    3. Performance parameter

    1. Maximum Ratings (Any electrical stress that exceeds the parameters in the table below may cause permanent damage to the device.)

    Parameter

    symbol

    Minimum

    Maximum

    unit

    Note

    Voltage

    Voo

    -0.3

    3.6

    V


    Operating temperature

    Tst

    -20

    85


    pin limit

    Into

    -100

    100

      mA


    storage temperature

    Tst

    -40

    125


     

    2. Working conditions (T=25 °C, V DD = 3V, unless otherwise specified)

    Parameter

    symbol

    Minimum

    Typical

    Maximum

    unit

    Note

    Voltage

    VDD

    2.7

    3

    3.3

    V


    operating current

    IDD

    12

    15

    20

    μA


    Sensitivity threshold

    VSENS

    120


    530

    μ V


    Output REL


    Output low frequency

    LOL

    10



    mA

    VOL < 1V

    Output high frequency

    LOH



    -10

    mA

    VOH >(VDD-1V)

    REL low level output lock time

    TOL


    2.3


    S

    Not adjustable

    REL high output lock time

    TOH

    2.3


    4793

    S


    Input SENS/ONTIME







    Voltage input range


    0


    VDD

    V

    Adjustment range between 0V and 1/4VDD

    Input bias current


    -1


    1

    μA

    Enable OEN


    Input low voltage

    VIL



    0.2 VDD

    V

    OEN voltage high to low threshold level

    Input high voltage

    VIH

    0.4VDD



    V

    OEN voltage low to high threshold level

    Input Current

    LI

    -1


    1

    μA

    VSS < VIN < VDD

    Oscillator and filter







    Low pass filter cutoff frequency




    7

    Hz


    High pass filter cutoff frequency




    0.44

    Hz


    Oscillator frequency on the chip

    FCLK



    64

    KHz


     

    3. Output voltage waveform

    P914(图1)


     

     4. Transmission spectrum of window material

    P914(图2) 


    5.Detection angle

    P914(图3)

    P914(图4)

     

    6. Size angle bitmap(mm)

     P914(图5)


    7. Application circuit

    P914(图6)

     

    8. Precautions

    ●When there are stains on the window, it will affect the detection performance, so please pay attention.

    ● The lens is made of a weak material (polyethylene). When a load or impact is applied to the lens, malfunction and performance deterioration may occur due to deformation and damage, so avoid the above.

    ● Failure to apply static electricity of ±200V or more may cause damage. Therefore, please pay attention to the operation, avoid touching the terminal directly by hand.

    ●When soldering a wire, solder the soldering iron at a temperature of 350 ° C or less and soldering within 3 seconds. When soldering through a solder bath, performance may deteriorate, so avoid it.

    ● Please avoid cleaning the sensor. Otherwise, the cleaning liquid may intrude into the inside of the lens, which may cause deterioration in performance.

    ● When using the cable wiring, it is recommended to use shielded wires to minimize the influence of interference.


    Performance parameter

    1. Maximum Ratings (Any electrical stress that exceeds the parameters in the table below may cause permanent damage to the device.)

    Parameter

    symbol

    Minimum

    Maximum

    unit

    Note

    Voltage

    Voo

    -0.3

    3.6

    V


    Operating temperature

    Tst

    -20

    85


    pin limit

    Into

    -100

    100

      mA


    storage temperature

    Tst

    -40

    125


     

    2. Working conditions (T=25 °C, V DD = 3V, unless otherwise specified)

    Parameter

    symbol

    Minimum

    Typical

    Maximum

    unit

    Note

    Voltage

    VDD

    2.7

    3

    3.3

    V


    operating current

    IDD

    12

    15

    20

    μA


    Sensitivity threshold

    VSENS

    120


    530

    μ V


    Output REL


    Output low frequency

    LOL

    10



    mA

    VOL < 1V

    Output high frequency

    LOH



    -10

    mA

    VOH >(VDD-1V)

    REL low level output lock time

    TOL


    2.3


    S

    Not adjustable

    REL high output lock time

    TOH

    2.3


    4793

    S


    Input SENS/ONTIME







    Voltage input range


    0


    VDD

    V

    Adjustment range between 0V and 1/4VDD

    Input bias current


    -1


    1

    μA

    Enable OEN


    Input low voltage

    VIL



    0.2 VDD

    V

    OEN voltage high to low threshold level

    Input high voltage

    VIH

    0.4VDD



    V

    OEN voltage low to high threshold level

    Input Current

    LI

    -1


    1

    μA

    VSS < VIN < VDD

    Oscillator and filter







    Low pass filter cutoff frequency




    7

    Hz


    High pass filter cutoff frequency




    0.44

    Hz


    Oscillator frequency on the chip

    FCLK



    64

    KHz


     


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